CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband

摘要

This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A 20-GHz pseudo-differential power amplifier (PA) with two-stage cascode configuration is designed with the impedance of 6.25Ω for input and 25Ω for output on the assumption of using an off-chip transformer for power combining. Each amplifier performs a saturation power of 20 dBm with a linear gain of 18 dB. The supply voltage is 2.4 V, and the chip size is 2.0×1.8 mm~2. A 77-GHz power amplifier with four-stage single configuration designed with the 50Ω impedance for input and output. The PA achieved a saturation power of 11.3 dBm with a linear gain of 9.7 dB.