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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (triangular voltage sweep) method
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Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (triangular voltage sweep) method

机译:使用TVS(三角电压扫描)方法计算Si上铁电薄膜中的极化和移动电荷密度

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The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This TVS method yield a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total mobile ionic space charge, respectively. The calculated polarization and the mobile charge density TVS measured at 250℃ were 0.42 μC/cm{sup}2 and 5.5×10{sup}11 mobile ions/cm{sup}2 in the SBT film of MFIS structure, and 1.4 μC/cm{sup}2 in the LiNbO{sub}3 film of MFS structure, respectively.
机译:提出了利用TVS方法同时检测Si上铁电薄膜的极化和移动电荷密度的技术。此TVS方法会产生可极化的离子峰和离子位移电流峰,其峰面积分别与总极化反转电荷和总移动离子空间电荷成比例。在MFIS结构的SBT薄膜中,在250℃下测得的极化强度和移动电荷密度TVS为0.42μC/ cm {sup} 2和5.5×10 {sup} 11个移动离子/ cm {sup} 2,为1.4μC/ cm。 MFS结构的LiNbO {sub} 3薄膜中的cm {sup} 2。

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