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首页> 外文期刊>日本応用磁気学会誌 >Magnetization reversal process in submicron epitaxial (10?0) Co dot arrays
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Magnetization reversal process in submicron epitaxial (10?0) Co dot arrays

机译:亚微米外延(10?0)Co点阵列的磁化反转过程

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摘要

Epitaxial arrays of (10?0) Co circular dots withdiameters of 0.3 #mu#m and 2.0 #mu#m were prepared byelectron-beam lithography and Ar ion etching. Magnetizationreversal processes influenced by well-defined magnetocrystallineanisotropy were examined with a magnetic force microscope(MFM) and a vector SQUID magnetometer. The coercive forceof both dot arrays is lower than that of an epitaxial Co film. FromMFM and vector magnetization measurements, a magneticvortex-like structure was found to be formed during thedemagnetization process for a 0.3 #mu#m circular dot array. Incontrast, a symmetrical domain structure was formed during thedemagnetization process for a 2.0 #mu#m dot array.
机译:通过电子束光刻和Ar离子刻蚀制备直径为0.3#μm和2.0μm的(10→0)Co圆点的外延阵列。用磁力显微镜(MFM)和矢量SQUID磁力计检查了受明确的磁晶各向异性影响的磁化反转过程。两个点阵的矫顽力都低于外延Co膜的矫顽力。通过MFM和矢量磁化测量,发现在消磁过程中,对于0.3#μm圆点阵列形成了类似磁涡旋的结构。相反,在去磁过程中对于2.0#μm的点阵形成了对称的畴结构。

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