Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

摘要

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon (Cz-Si) as well as polycrystalline shaped Si have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in Si in the process of plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type Cz-Si. This effect can be used for n-p- and p-n-p-silicon based device structures producing.