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Modeling effects of initial dislocation microstructure on the yield strength in FCC single crystal Cu with dislocation dynamics

机译:初始位错微观结构对FCC单晶铜屈服强度的影响

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Three dimensional dislocation dynamics (3D-DD) method was used to study how initial dislocation microstructure, with varying dislocation density, length and distribution, affects the yield strength in face-centered cubic (FCC) single crystal Cu. Initial dislocations are generated for three average lengths for each one of the seven dislocation densities ranging from 0.1-5 × 10 ~(12) m/m~3.They are randomly distributed on slip planes. The uniaxial tension simulation results for two crystallographic loading orientations, [1 0 0] and [1 1 1], all show that the yield strength has a well-defined linear relationship with the average length of these dislocations, except for very low dislocation densities where small number of dislocations lead to a stochastic behavior. This indicates that dislocation-density based crystal plasticity formulations, including the square-root relationship between flow stress and dislocation density, only work when dislocation densitiesumbers are sufficiently large so that a statistically accurate description of the microstructure can be obtainable.
机译:使用三维位错动力学(3D-DD)方法研究了位错密度,长度和分布变化的初始位错微观结构如何影响面心立方(FCC)单晶Cu的屈服强度。初始位错在0.1-5×10〜(12)m / m〜3范围内的七个位错密度的每一个中产生三个平均长度,它们随机分布在滑移面上。 [1 0 0]和[1 1 1]两种晶体学加载方向的单轴拉伸模拟结果均表明,屈服强度与这些位错的平均长度具有明确的线性关系,但位错密度非常低少数错位导致随机行为。这表明,基于位错密度的晶体可塑性配方,包括流动应力和位错密度之间的平方根关系,仅在位错密度/数量足够大时才能起作用,从而可以获得统计上准确的显微组织描述。

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