Electrical properties of BLT thin films prepared by CSD (chemical solution deposition) method

摘要

Recently, the ferroelectrics bismuth lanthanum titanate (Bi{sub}3.25La{sub}0.75Ti{sub}3O{sub}12) thin film has been expected as a novel material for FRAM device since it has a large polarization, fatigue free, and crystallized at low temperature compared to SrBi{sub}2Ta{sub}2O{sub}9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO{sub}2/Si substrate by chemical solution deposition method. The films were crystallized at the temperature range of 600～700℃ using rapid thermal process and quartz tube furnace. X-ray diffraction shows a ferroelectric single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700℃ for 2 min are 16.75 and 13.14 uC/cm{sup}2, respectively.