Application of hydrogenated polycrystalline gallium nitride to UV photodiodes and light emitting devices

摘要

Poly-crystalline III- V nitrides have been investigated to extend the applications in large-area and low-cost optoelectronic devices. For the purpose, hydrogenated nitrides are grown at lower temperature than 400℃ on various substrates such as glasses, transparent conductive oxides, metals and silicon by remote-plasma metalorganic chemical vapor deposition. Among various devices, indium-tin-oxides coated glass/Mg-doped hydrogenated polycrystalline GaN(poly-GaN:H) /Au devices reveal excellent photoelectrical properties comparable to single crystalline GaN photodiodes. We have successfully developed UV photodiodes composed of the polycrystalline GaN for the first time and developed and put the portable UV meters with the photodiodes to the market. The feasibility of large area light emitting device using poly-GaN:H are discussed.