スピンオンシリコン酸化膜熱処理温度の無水フッ化水素エッチングへの影響

摘要

Dependence of the etch rate of spin-coated silicon oxide films by anhydrous hydrogen fluoride gas on the annealing temperature was mainly investigated. The minimum value of the etch rate is obtained for the oxide films annealed between 450-600 deg C in our experiments. From surface analysis, infrared absorption analysis, and temperature programmed desorption analysis, the high etch rate for the oxide films annealed at 800 deg C is considered to be due to the contained water, which has been incorporated into the films after the annealing.