Investigation of ZnO thin film grown on Co buffer toward ZnO tunnel barrier based magnetic tunnel junctions

摘要

Magnetic tunnel junctions (MTJs) have manifested widespread investigations due to technological applications in magnetic random access memories (MRAMs) and magnetic sensors. In addition to the fact that ZnO-based magnetic semiconductors have attracted much attention for their potential applications in spintronics and magneto-optics because of the room-temperature ferromagnetism, spontaneous polarization naturally existing in ZnO thin films give rises to a possible electric field controlling of MTJs with ZnO-related materials as tunnel barriers.