首页> 外文期刊>電子情報通信学会技術研究報告. 超伝導エレクトロニクス >Development of ferromagnetic insulator EuO thin films for the insulator barrier of high-T{sub}c Josephson junction
【24h】

Development of ferromagnetic insulator EuO thin films for the insulator barrier of high-T{sub}c Josephson junction

机译:高T {sub} c Josephson结的绝缘体阻挡层的铁磁绝缘体EuO薄膜的研制

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

We intend to develop a high-T{sub}C superconductor (HTSC)-T{sub}C/ferromagnetic insulator EuO/HTSC Josephson junction. Ferromagnetic Curie temperature of BuO is 69 K. It is expected that the effect of ferromagnetism on junction characteristic is investigated as considering the transition from paramagnetism to ferromagnetism of barrier layer below T{sub}C. As a first step to develop such a junction, we grow EuO film on MgO substrate, which has same structure as EuO, and on SrTiO{sub}3 substrate, which structure is a base of HTSC layered structure. EuO films epitaxially grew directly on MgO substrate, and on SrTiO{sub}3 substrate with BaO butler layer. Such films had magnetic properties same as bulk.
机译:我们打算开发一种高T {sub} C超导体(HTSC)-T {sub} C /铁磁绝缘体EuO / HTSC Josephson结。 BuO的铁磁性居里温度为69K。考虑到T {sub} C以下势垒层从顺磁性向铁磁性的转变,可以研究铁磁性对结特性的影响。作为开发这种结的第一步,我们在具有与EuO相同结构的MgO衬底上和在作为HTSC分层结构基础的SrTiO {sub} 3衬底上生长EuO膜。 EuO薄膜直接在MgO衬底上以及具有BaO管层的SrTiO {sub} 3衬底上外延生长。这样的膜具有与块相同的磁性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号