首页> 外文期刊>Collection of Czechoslovak Chemical Communications >STRUCTURAL AND ELECTRONIC PROPERTIES OF PENTACENE/PENTACENEQUINONE THIN FILMS PREPARED BY LANGMUIR-BLODGETT TECHNIQUE
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STRUCTURAL AND ELECTRONIC PROPERTIES OF PENTACENE/PENTACENEQUINONE THIN FILMS PREPARED BY LANGMUIR-BLODGETT TECHNIQUE

机译:用朗缪尔-布洛杰特技术制备的并五苯/并四苯醌薄膜的结构和电子性质

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摘要

Structural and electronic properties of pentacene/pentacenequinone thin films prepared on various solid-state substrates by the Langmuir-Blodgett technique are reported. Amorphous structure of the prepared films has been proved by XRD measurements. Oxygen-related defects have been identified in the Langmuir-Blodgett films as a consequence of the exposure of pentacene Langmuir layer to air. Crystallization induced by thermal treatment of the prepared amorphous thin films has been observed. Electronic properties of pentacene/ pentacenequinone Langmuir-Blodgett films have been investigated in the contact-less architecture using electrochemical techniques. The energy band diagram of the amorphous pentacene/pentacenequinone Langmuir-Blodgett film on a metallic surface was constructed from the obtained electrochemical data.
机译:报道了通过Langmuir-Blodgett技术在各种固态基底上制备的并五苯/并五苯醌薄膜的结构和电子性质。通过XRD测量证明了所制备膜的非晶结构。由于并五苯Langmuir层暴露在空气中,导致在Langmuir-Blodgett膜中发现了与氧气有关的缺陷。已经观察到通过热处理制备的非晶薄膜引起的结晶。并五苯/并五苯醌Langmuir-Blodgett薄膜的电子性能已在非接触式体系中使用电化学技术进行了研究。根据获得的电化学数据,构造了金属表面上的非晶并五苯/并五苯醌Langmuir-Blodgett膜的能带图。

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