Non-termal ultrasonic treatment of silicon microwave diodes

摘要

The paper is dealing with the influence of ultrasonic treatment on voltage-current characteristics of silicon microwave diodes. Diodes under investigation were manufactured with boron diffusion into epitaxial n-n~+ structures. Forward and reverse voltage. current characteristics as well as their first derivatives of the encased devices were measured before and after treatment. One had discovered the improving influence of such treatment on the excess current, non-ideality factor and features of the avalanche breakdown. One could suppose, that the observed changes in the defect's structure are caused by absorbance of the acoustic waves on single imperfections or on their congestion. Our experiment shows that ultrasonic treatment may be used as non-thermal gettering processing.