Effect of pressure on the giant magnetoresistance in Co/Cu magnetic multilayers

摘要

The effect of pressure and magnetic field on the temperature dependent electrical resistivity p(T) of the [Co(1.02 nm)/Cu(t(Cu) nm)](25) magnetic multilayers (MML) with t(Cu) = 0.76 [ferromagnetic (F)] and 1.05 [antiferromagnetic (AF)] has been investigated at low temperature. MR ratio Delta rho/rho(s) for t(Cu) = 1.05 and 0.76 decreases with increasing pressure. The pressure dependent Delta rho/rho(s) for t(Cu) = 1.05 is more significant than that for 0.76. p(T) at H = 0 and above saturation field H-s (H = 2T) for Co/Cu MMLs is found to show T-2-dependence in the relatively wide temperature range, 4.2 <= T <= 20 K, at low temperature. The coefficient of T-2 term (=A) for F-state is larger than that for AF-state at ambient pressure. The change of A for t(Cu) = 1.05 at H = 0 is smaller than that at H = 2T. These results are discussed on the basis of the electron scattering at interfaces due to magnons or spin-wave.