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首页> 外文期刊>Journal of the Physical Society of Japan >Electric conductivity of the zero-gap semiconducting state in alpha-(BEDT-TTF)(2)I-3 salt
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Electric conductivity of the zero-gap semiconducting state in alpha-(BEDT-TTF)(2)I-3 salt

机译:α-(BEDT-TTF)(2)I-3盐中零间隙半导体状态的电导率

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摘要

Electric conductivity that reveals the zero-gap semiconducting (ZGS) state has been investigated as a function of temperature T and lifetime T in order to understand the ZGS state in a quarter-filled ce(BEDT-TTF)(2)I-3 salt with four sites in the unit cell. By treating tau as a parameter and employing the one-loop approximation, it is found that the conductivity is proportional to T and tau for k(B)T h/tau and is independent of T and tau for kBT h/tau. Further, the conductivity, which is independent of T in the ZGS state, is examined for the impurity scattering in terms of the Born approximation.
机译:为了了解四角填充ce(BEDT-TTF)(2)I-3盐中的ZGS状态,已经研究了揭示零间隙半导体(ZGS)状态的电导率与温度T和寿命T的关系。在单元格中有四个位置。通过将tau作为参数并采用单环近似,发现对于k(B)T h / tau,电导率与T和tau成正比,对于kBT h / tau,电导率与T和tau不相关。头此外,根据Born近似,检查了在ZGS状态下与T无关的电导率的杂质散射。

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