Transparent Ni2+-doped new La2O3-Ga2O3-Al2O3-SiO2 (LGAS) glass-ceramics (GC) embedding beta-Ga2O3 nanocrystals was prepared. Upon excitation at 970 nm, an emission band at around 1200 nm was observed originating from the T-3(2)(F-3) -> (3)A(2)(F-3) transition of Ni2+ in distorted octahedral sites. Effects of both heat-treated temperature and doping content on the luminescent properties were also studied. The results revealed that a concentration quenching of the luminescence occurs as the molar ratio of Ni2+ exceeds the optimum value. The superbroadband near-infrared (NIR) emission from Ni2+-doped new GC can be as host materials for a broadband optical amplifier. (C) 2008 Optical Society of America.
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