Nonlinear optical properties of GaSb and GaInAsSb and their application for phase conjugation in degenerate four-wave mixing

摘要

The nonlinear optical properties of, and phase conjugation in, the bulk semiconductor GaSb were investigated at 2.1 mu m by use of the Z-scan and the degenerate four-wave mixing techniques. Measurements were also carried out near the fundamental bandgap of the quaternary compound Ga0.87In0.13As0.11Sb0.89. Z-scan measurements as a function of sample temperature, in conjunction with theoretical modeling, identified the predominant sources of the medium nonlinearity to be nonequilibrium free carriers generated through two-photon absorption in GaSb, while it is saturation of real transitions near the fundamental band edge in Ga0.87In0.13As0.11Sb0.89 that was identified as the primary cause of this nonlinearity. mixing phase-conjugate reflectivity of as much as 14% has been achieved in GaSb. Degenerate four-wave [S0740-3224(00)01005-5]. OCIS codes: 190.5970, 190.5040, 190.4380, 190.4180, 190.0190, 140.3070, 160.4330. [References: 17]