Physical Properties of A(Cu_(1/3)Nb_(2/3))O_3 (A = Ba, Sr, Ca)-substituted BaTiO_3 System Grown by Using Aerosol Deposition

摘要

The physical properties of the lead-free piezoelectric material BaTiO_3 (BT) with complex perovskite phase additives, i.e., A(Cu_(1/3)Nb_(2/3))O_3 (A = Ba, Sr, Ca), were investigated. The dense and crack-free thick films with thickness of > 5 μm were grown on platinized Si(100) wafers by using the aerosol deposition method (AD) at room temperature. Compared to pure BT grown by using AD, complex perovskite-substituted BT thick films showed improved physical properties and film quality even after post annealing. The optimal amount of the additives and the optimal post annealing temperature were determined in accordance with the dielectric and the ferroelectric properties.