Observation of Non-Gaussian and Generation-Recombination Noisein n-Type GaAs/AIGaAs Multiple Quantum Wells

摘要

The time trace and the noise spectrum of the dark current are measured to probe the non-Gaussian properties and the generation-recombination noise in n-type GaAs/AlGaAs quantum wellinfrared photodetectors. We observed that time-dependent random telegraph signals showed anon-Gaussian two-level random fluctuation of the current amplitude arising from trapping anddetrapping of carriers by a quantum well. A change in the carrier lifetime, which corresponds tocapture in a well, is also observed at low bias by measuring the low-frequency noise spectrum. Weinvestigated a relation between the two-level random fluctuation and the carrier lifetime or thecapture probability.