Elimination of parasitic effects due to measurement conditions of SrTiO_3 thin films up to 40 GHz

摘要

Effective use of electromagnetic simulation software for evaluation of the microwave properties of dielectric thin films was demonstrated. The reliability of the high-frequency dielectric properties extracted from the measured Sn reflection coefficients with the aid of the electromagnetic simulation software is mainly limited by how accurately the measured parasitics are simulated. The need to correct the parasitic differences between the simulation and measurement was shown by the significant dependence of probe contact position on the obtained dielectric properties. The parasitic differences were represented by series and parallel correction admittances connected to the measured admittance and were effectively eliminated. The high-frequency dielectric properties of a highly crystalline SrTiO_3 (STO) thin film were investigated up to 40 GHz by using the measurement techniques developed. The permittivity (relative dielectric constant) of the STO thin film remained substantially constant at 265 up to 40 GHz, and the dielectric loss value was about 0,03 at 40 GHz.