首页> 外文期刊>Journal of the European Ceramic Society >Development of microstructure during creep of polycrystalline mullite and a nanocomposite mullite/5 vol.percent SiC
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Development of microstructure during creep of polycrystalline mullite and a nanocomposite mullite/5 vol.percent SiC

机译:多晶莫来石和纳米复合莫来石/ 5 vol。%SiC蠕变过程中的微观结构发展

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摘要

The microstructures of as-sintered and creep tested polycrystalline mullite and mullite reinforced with 5 vol.percent nano-sized SiC particles have been characterized by scanning and transmission electron microscopy. The dislocation densities after tensile creep testing at 1300 and 1400 deg C were virtually unchanged as compared to the as-sintered materials which indicates diffusion-controlled deformation. Mullite matrix grain boundaries bending around intergranular SiC particles suggest that grain boundary pinning, in addition to a reduced mullite grain size, contributed to the increased creep resistance of the mullite/5 vol.percent SiC nanocomposite. Both materials showed pronounced cavitation at multi-grain junctions after creep testing at 1400 deg C which suggests that unaccommodated grain boundary sliding, facilitated by softening of the intergranular glass, occurred at this temperature. This is consistent with the higher stress exponents at 1400 deg C.
机译:烧结和蠕变测试的多晶莫来石和含5%(体积)纳米SiC颗粒增强的莫来石的显微结构已通过扫描和透射电子显微镜进行了表征。与烧结后的材料相比,在1300和1400℃进行拉伸蠕变试验后的位错密度实际上没有变化,这表明扩散控制了变形。围绕晶间SiC颗粒弯曲的莫来石基体晶界表明,除了减小了莫来石晶粒尺寸外,晶界钉扎还有助于增加mullite / 5体积百分比SiC纳米复合材料的抗蠕变性。两种材料在1400摄氏度的蠕变测试后,在多晶粒接合处均表现出明显的空化现象,这表明在此温度下发生了由于晶界玻璃软化而引起的不适应的晶界滑动。这与1400摄氏度时较高的应力指数相符。

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