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Mixed conduction induced by grain boundary engineering

机译:晶界工程引起的混合导电

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摘要

Mixed oxygen-ion electronic conductors were prepared starting from the well-established solid electrolyte La_(0.95)Sr_(0.05)Ga_(0.90)Mg_(0.10)O_(3- delta) (LSGM). The adopted strategy involved selective grain boundary doping with iron to form a grain boundary region with high electronic conductivity. Scanning electron microscopy coupled with energy dispersive spectroscopy (SEM EDS), impedance spectroscopy in air (around 300 deg C) and high temperature (700-800 deg C) ac conductivity measurements as a function of p_(o_2) all suggest that this doping strategy was successful. In fact, on increasing the Fe-dopant level, Fe always concentrated along the grain boundary region (as confirmed by SEM EDS), the total conductivity increased and each individual impedance arc decreased, in agreement with predictions based on the presence of a parallel pathway for electronic transport. Furthermore, the increase in total conductivity (sigma) with dopant level showed a positive log sigma versus log p_(o_2) dependence, typical of hole conductivity.
机译:从公认的固体电解质La_(0.95)Sr_(0.05)Ga_(0.90)Mg_(0.10)O_(3-delta)(LSGM)开始制备混合的氧离子电子导体。所采用的策略涉及用铁选择性地掺杂晶界以形成具有高电子传导性的晶界区域。扫描电子显微镜与能量色散光谱(SEM EDS),空气中的阻抗光谱(大约300摄氏度)和高温(700-800摄氏度)交流电导率测量随p_(o_2)的变化均表明该掺杂策略那是成功的。实际上,随着铁掺杂水平的提高,铁总是沿晶界区域集中(通过SEM EDS证实),总电导率增加,每个单独的阻抗电弧减小,这与基于平行路径存在的预测相一致用于电子运输。此外,总电导率(sigma)随掺杂物含量的增加显示出正的log sigma对log p_(o_2)依赖性,这是空穴电导率的典型特征。

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