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首页> 外文期刊>Journal of the Chemical Society, Dalton Transactions. Inorganic Chemistry >Molecular precursors for (nano) materials - a one step strategy
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Molecular precursors for (nano) materials - a one step strategy

机译:(纳米)材料的分子前体-一步法

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The use of molecular Single Source Precursors (SSP) containing all elements necessary for the formation of the final solid material in CVD (Chemical Vapor Deposition) or sol-gel routes is classified with respect to the control of the reaction. Three different cases have been distinguished: In SSP-I the stoichiometric ratio of the elements in the precursor corresponds to the ratio required in the solid whereas the number and kind of side products of the reaction (ligands) are not controlled. In SSP-II, not only does the ratio of the elemental components of the precursor have the correct stoichiometry but also the ligands are chosen in such a way what a cascade of reactions is induced at moderate temperatures leading to few products and therefore low contamination of the solid material. In SSP-III, the precursor decomposes to form at least two solid phases with perfect stochiometric and structural control. All three processes allow the obtention of nanocrystalline materials.
机译:关于反应的控制,分类了使用含有在CVD(化学气相沉积)或溶胶-凝胶途径中形成最终固体材料所必需的所有元素的分子单源前体(SSP)。区分了三种不同的情况:在SSP-1中,前体中元素的化学计量比对应于固体中所需的比率,而反应副产物(配体)的数量和种类不受控制。在SSP-II中,不仅前体元素成分的比例具有正确的化学计量,而且以这样的方式选择配体:在中等温度下诱导级联反应,从而导致产物很少,因此低污染固体材料。在SSP-III中,前体分解形成至少两个固相,并具有理想的化学计量和结构控制。所有这三个过程都允许获得纳米晶体材料。

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