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Continuum theory of epitaxial crystal growth. I

机译:外延晶体生长的连续谱理论。一世

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We present various continuum limits to describe epitaxial thin film growth. We consider a hierarchy of models which can take into account the diffusion of terrace adatoms, attachment and detachment of edge adatoms, vapor phase diffusion and the effect of multiple species. The starting point is the Burton-Cabrera-Frank type step flow model. We have obtained partial differential equations in the form of a coupled system of diffusion equation for the adatom density and a Hamilton-Jacobi equation for the film height function. This is supplemented with appropriate boundary conditions at the continuum level to describe the growth at the peaks and valleys on the film. The results here can be used in a macroscopic description of thin film growth. [References: 28]
机译:我们提出了各种连续极限来描述外延薄膜的生长。我们考虑模型的层次结构,该模型可以考虑阶地原子的扩散,边缘原子的附着和脱离,气相扩散以及多种物种的影响。起点是Burton-Cabrera-Frank型逐步流模型。我们获得了偏微分方程,其形式为用于原子密度的扩散方程和用于膜高度函数的Hamilton-Jacobi方程的耦合方程组。在连续体水平上适当的边界条件对此进行了补充,以描述膜上峰和谷处的生长。这里的结果可用于薄膜生长的宏观描述。 [参考:28]

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