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Effects of Excess or Deficiency of Oxygen Content on the Electronic Structure of High-T_c Cuprates

机译:含氧量过高或不足对高T_c铜酸盐电子结构的影响

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摘要

Band structure calculations are presented for large supercells of Ba_2CuO_4 (BCO) with O-vacancies in planar or apical positions, and of superoxygenated La_2CuO_4 (LCO) with oxygen interstitials in the La_2O_2 layers. It is found that apical oxygen vacancies in BCO act as electron dopants and makes the electronic structure similar to that of hole doped LCO. Excess oxygen interstitials forming wires in the La_2O_2 layers of LCO are shown to yield a much larger density-of-states at the Fermi energy than for the stoichiometric compound related with a segmentation of the Fermi surface. Antiferromagnetic (AFM) spin fluctuations are strengthened by O-vacancies in BCO as well as by oxygen interstitials in LCO, but are strongly suppressed in O-deficient LCO. Our results indicate the complexity of doping by O-vacancies, and by ordered defects that are a significant factor controlling the electronic properties of cuprates.
机译:给出了在平面或顶部位置具有O空位的Ba_2CuO_4(BCO)的大型超级电池,以及在La_2O_2层中具有氧间隙的超氧化La_2CuO_4(LCO)的能带结构计算。发现BCO中的顶部氧空位起电子掺杂剂的作用,并使电子结构类似于掺杂空穴的LCO。 LCO的La_2O_2层中形成线的过量氧填隙显示出在费米能量下比与费米表面分段相关的化学计量化合物产生的状态密度大得多。 BCO中的O空位以及LCO中的氧间隙会增强反铁磁(AFM)自旋波动,但在O缺陷型LCO中会强烈抑制自旋波动。我们的结果表明,通过O空位和有序缺陷进行掺杂的复杂性是控制铜酸盐电子性能的重要因素。

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