Constraints on Models of Electrical Transport in Optimally Doped La_(2-x)Sr_xCuO_4 from Measurements of Radiation-Induced Defect Resistance

摘要

Precise measurements of the temperature dependence of additional resistivity caused by defect scattering were used to constrain models of carrier transport in La_(1.84)Sr_(0.16)CuO_4. Where previous magnetotransport studies have delineated two distinct scattering processes, proportional to T and T~2, respectively, the new defect scattering results suggest strongly that the two processes act as parallel conductance channels.