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Copper corrosion in buffered and non-buffered synthetic seawater: a comparative study

机译:缓冲和非缓冲合成海水中的铜腐蚀:比较研究

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The electrochemical behaviour of copper in neutral buffered and non-buffered synthetic seawater and in pure chloride solutions has been studied by cyclic voltammetry, weight loss measurements, open circuit potential and scanning electron microscopy (SEM). Values of the repassivation potentials of Cu in non-buffered and buffered synthetic seawater, at 50 mV s~(-1), were 0.12 and 0.46 V vs. SCE, respectively. The sharpness, heights and location of the different peaks as well as their charges were shown to be influenced by the composition of the solution, buffering conditions, deoxygenation, polarization potential and time. High chloride concentrations lead to higher oxidation charges. The anodic and the cathodic charges were shown to increase as the chloride concentration increases. The open circuit potential transients of copper in non-deoxygenated, non-buffered synthetic seawater indicate pitting from the beginning of the exposure, while in buffered solutions the pitting appeared only after a quite long exposure period, i.e. after 40 days. Corrosion rates of Cu samples after 3 months of immersion were higher in solutions of pure chloride (0.5 M) than in synthetic seawater. After six months the differences were even more noticeable. SEM images have showed a somewhat higher density of pits on copper samples immersed in the chloride solution (0.5 M), in comparison with those in synthetic seawater.
机译:通过循环伏安法,失重测量,开路电势和扫描电子显微镜(SEM)研究了铜在中性缓冲和非缓冲合成海水以及纯氯化物溶液中的电化学行为。在50 mV s〜(-1)时,非缓冲和缓冲合成海水中Cu的再钝化电位分别为0.12和0.46 V(相对于SCE)。结果表明,不同峰的尖锐度,高度和位置以及它们的电荷受溶液组成,缓冲条件,脱氧,极化电位和时间的影响。高氯化物浓度导致较高的氧化电荷。阳极电荷和阴极电荷显示出随着氯化物浓度的增加而增加。非脱氧,非缓冲合成海水中铜的开路电位瞬变表明从暴露开始就出现点蚀,而在缓冲溶液中,点蚀仅在相当长的暴露时间后(即40天后)出现。在纯氯化物(0.5 M)溶液中浸泡3个月后,铜样品的腐蚀速率高于合成海水。六个月后,差异更加明显。 SEM图像显示,与合成海水相比,浸入氯化物溶液(0.5 M)的铜样品上的凹坑密度更高。

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