首页> 外文期刊>Journal of Solid State Chemistry >Isothermal sections of the quasi-ternary systems Ag2S(Se)-Ga2S(Se)(3)-In2S(Se)(3) at 820 K and the physical properties of the ternary phases Ga5.5In4.5S15, Ga6In4Se15 and Ga5.5In4.5S15:Er3+, Ga6In4Se15:Er3+
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Isothermal sections of the quasi-ternary systems Ag2S(Se)-Ga2S(Se)(3)-In2S(Se)(3) at 820 K and the physical properties of the ternary phases Ga5.5In4.5S15, Ga6In4Se15 and Ga5.5In4.5S15:Er3+, Ga6In4Se15:Er3+

机译:准三元体系Ag2S(Se)-Ga2S(Se)(3)-In2S(Se)(3)的等温截面以及820 K的三元相的物理性质Ga5.5In4.5S15,Ga6In4Se15和Ga5.5In4 .5S15:Er3 +,Ga6In4Se15:Er3 +

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Isothermal sections of the quasi-ternary systems Ag2S(Se)-Ga2S(Se)(3)-In2S(Se)(3) at 820 K were compared. Along the 50 mol% Ag2S(Se), both systems feature continuous solid solutions with the chalcopyrite structure. Along the 17 mol% Ag2S(Se), the interactions at the AgIn5S(Se)(8)-"AgGa5S(Se)(8)" sections are different. In the Ag2S-Ga2S3-In2S3 system the existence of the layered phase AgGa5In5-xS8, 2.25 <= x <= 2.85, was confirmed (S.G. P6(3)mc). The Ag2Se-Ga2Se3-In2Se3 system features the formation of solid solution (up to 53 mol% Ga2Se3) based on AgIn5Se8 (S.G. P-42m). Crystal structure, atomic co-ordinates were determined by powder diffraction method for samples from the homogeneity region of AgIn5Se8. Specific conductivities of the crystals Ga6In4Se15 (1.33.10(-6) Omega(-1)m(-1)), Ga5.94In3.96Er0.1Se15 (3.17.10(-6)Omega(-1)m(-1)), Ga5.5In4.5S15 (7.94.10(-6)Omega(-1)m(-1)), Ga5.46In4.47Er0.07S15 (1.10(-9)Omega(-1)m(-1)) were measured at room temperature. Optical absorption and photoconductivity spectra were recorded in the range 400-760 nm. The introduction of erbium leads to an increase in the absorption coefficient and to the appearance of absorption bands at 530, 660, 810, 980, 1530 nm. (C) 2016 Elsevier Inc. All rights reserved.
机译:比较了准三元体系Ag2S(Se)-Ga2S(Se)(3)-In2S(Se)(3)在820 K下的等温截面。沿着50 mol%的Ag2S(Se),两个系统都具有具有黄铜矿结构的连续固溶体。沿着17 mol%的Ag2S(Se),在AgIn5S(Se)(8)-“ AgGa5S(Se)(8)”部分的相互作用不同。在Ag2S-Ga2S3-In2S3系统中,证实存在层状相AgGa5In5-xS8,2.25≤x≤2.85(S.G.P6(3)mc)。 Ag2Se-Ga2Se3-In2Se3系统的特征是基于AgIn5Se8(S.G. P-​​42m)形成固溶体(最高53 mol%Ga2Se3)。用粉末衍射法测定AgIn5Se8同质区域样品的晶体结构,原子坐标。晶体Ga6In4Se15(1.33.10(-6)Omega(-1)m(-1)),Ga5.94In3.96Er0.1Se15(3.17.10(-6)Omega(-1)m(-1)的比电导率)),Ga5.5In4.5S15(7.94.10(-6)Omega(-1)m(-1)),Ga5.46In4.47Er0.07S15(1.10(-9)Omega(-1)m(-1 ))在室温下测量。在400-760nm范围内记录光吸收和光电导光谱。 introduction的引入导致吸收系数的增加以及在530、660、810、980、1530 nm处出现吸收带。 (C)2016 Elsevier Inc.保留所有权利。

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