Dielectric properties of some MM′O_4 and MTiM′O_6 (M=Cr, Fe, Ga; M′=Nb, Ta, Sb) rutile-type oxides

摘要

We describe an investigation of the structure and dielectric properties of MM′O_4 and MTiM′O_6 rutile-type oxides for M=Cr, Fe, Ga and M′=Nb, Ta and Sb. All the oxides adopt a disordered rutile structure (P4_2/mnm) at ambient temperature. A partial ordered trirutile-type structure is confirmed for FeTaO_4 from the low temperature (17 K) neutron diffraction studies. While both the MM′O_4 oxides (CrTaO_4 and FeTaO_4) investigated show a normal dielectric property MTiM′O_6 oxides for M=Fe, Cr and M′=Nb/Ta/Sb display a distinct relaxor/relaxor-like response. Significantly the corresponding gallium analogs, GaTiNbO_6 and GaTiTaO_6, do not show a relaxor response at T<500 K.