首页> 外文期刊>Journal of Polymer Science, Part B. Polymer Physics >Effects of Silica Nanoparticle Addition on Polymer Semiconductor Wettability and Carrier Mobility in Solution-Processable Organic Transistors on Hydrophobic Substrates
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Effects of Silica Nanoparticle Addition on Polymer Semiconductor Wettability and Carrier Mobility in Solution-Processable Organic Transistors on Hydrophobic Substrates

机译:二氧化硅纳米粒子的添加对疏水性基板上可溶液处理的有机晶体管中聚合物半导体的润湿性和载流子迁移率的影响

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摘要

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3-hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field-effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin-coating technique, leading to higher mobility compared with P3HT FETs fabricated on non-modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution-processed P3HT/SNPs FETs on ODTS-modified substrates exhibit a field-effect mobility of 1.3 X 10(-2) cm(2) V-1 s(-1), which is almost comparable to that of P3HT FETs without SNPs (2.1 X 10(-2) cm(2) V-1 s(-1)). (c) 2015 Wiley Periodicals, Inc.
机译:研究了二氧化硅纳米颗粒(SNPs)的添加对疏水性基底上的区域规则聚(3-己基噻吩)(P3HT)有机半导体溶液的润湿性以及由这些薄膜制成的有机场效应晶体管(OFET)中载流子迁移率的影响。在用苯基表面活性剂添加SNP后,显着抑制了由P3HT溶液制成的膜在经十八烷基三氯硅烷(ODTS)改性的疏水性基材上的去湿性。这使我们能够通过传统的旋涂技术制造具有高结晶度的连续P3HT / SNPs薄膜,与在非改性衬底上制造的P3HT FET相比,具有更高的迁移率。此外,添加具有更大直径的SNP可补偿与SNP浓度增加相关的迁移率降低。在ODTS修饰的基板上进行溶液处理的P3HT / SNPs FET的场效应迁移率为1.3 X 10(-2)cm(2)V-1 s(-1),几乎与没有SNP的P3HT FET相当(2.1 X 10(-2)cm(2)V-1 s(-1))。 (c)2015年威利期刊有限公司

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