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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of a ground shield on heat flux in parallel-plate plasma system
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Influence of a ground shield on heat flux in parallel-plate plasma system

机译:接地屏蔽对平行板等离子体系统中热通量的影响

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The influence of a ground shield on the heat flux to a substrate in a parallel-plate plasma system was investigated experimentally using an original temperature measurement technique. The evaluation of the temperature rise curve shows that the heat flux from the plasma towards the substrate increases from 8% of the rf power to 26% by surrounding the powered electrode with the ground shield. The flux density on the powered electrode is 350 W m(-2) at an rf power of 50 W and pressure of 50 mTorr, and the value increases to 1150 W m(-2) by shielding. However, the total power into the electrode is 23-26% of the rf power in both cases, after accounting for the larger plasma facing surface area of the unshielded system. By shielding, a self-bias voltage decreases from 80% of the applied rf voltage to 73% due to a contracted spatial distribution of the electron density between the electrodes by shielding. The ion Bur is smaller than the heat flux obtained from the substrate temperature rise and it increases by shielding. [References: 14]
机译:使用原始温度测量技术,通过实验研究了接地屏蔽对平行板等离子体系统中流向基板的热通量的影响。对温度上升曲线的评估表明,通过用接地屏蔽罩围绕有源电极,从等离子体到基板的热通量将从射频功率的8%增加到26%。在50 W的射频功率和50 mTorr的压力下,带电电极上的通量密度为350 W m(-2),通过屏蔽将其值增加到1150 W m(-2)。但是,在两种情况下,考虑到非屏蔽系统面对等离子体的较大表面积,进入电极的总功率为rf功率的23-26%。通过屏蔽,由于通过屏蔽在电极之间电子密度的收缩的空间分布,自偏置电压从施加的rf电压的80%降低到73%。离子Bur小于从基板温度升高获得的热通量,并且通过屏蔽而增加。 [参考:14]

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