Structural and in-depth compositional features of homogeneous pentenary chalcopyrite alloys prepared with a reproducible deposition technology

摘要

Homogeneous single-phase Cu(In0.75Ga0.25)(Se(1-y)Sy)(2) alloys were prepared by the reaction of rnagnetron sputtered CuIn0.75Ga0.25 precursors to a H2Se/Ar and H2S/Ar gaseous atmosphere under well-defined experimental conditions. X-ray diffraction analysis of the films showed characteristic chalcopyrite peaks with a high degree of symmetry, indicative of homogeneous rather than compositionally graded material. Glancing Zn incident angle x-ray diffraction revealed virtually no variation in the lattice parameters through the entire depth of the alloys. X-ray photoelectron spectroscopy depth profiling confirmed the homogeneous distributions of the respective elements through the entire depth of the pentenary semiconductor alloy under optimized selenization/sulfurization conditions.