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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >RELEASE OF DEUTERIUM FROM CARBON-DEUTERIUM FILMS ON BERYLLIUM DURING CARBIDE FORMATION AND OXIDATION
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RELEASE OF DEUTERIUM FROM CARBON-DEUTERIUM FILMS ON BERYLLIUM DURING CARBIDE FORMATION AND OXIDATION

机译:碳化物形成和氧化过程中碳-氘薄膜对铍的氘释放

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Amorphous carbon-deuterium (a-C:D) films on beryllium substrates were vacuum annealed while the composition versus depth was followed using Rutherford backscattering, elastic recoil detection and Auger electron spectroscopy. The a-C:D film reacts with the Be substrate to form stoichiometric beryllium carbide, Be2C. The reaction begins at the interface and progresses through the film around 500 degrees C until the entire film has reacted. D is absent from the reacted portion of the film but is still present in the unreacted carbon. The a-C:D films are removed from the Be without forming carbide by heating in oxygen at 400 degrees C. Ion beam analysis was also used to study the oxidation of Be at temperatures up to 680 degrees C. Through sequential exposures to different isotopes of oxygen it was shown that oxidation occurs by permeation of Be from the metal/oxide interface to the outer surface. (C) 1997 Elsevier Science B.V. [References: 16]
机译:铍基板上的非晶碳-氘(a-C:D)膜经过真空退火,同时使用卢瑟福反向散射,弹性反冲检测和俄歇电子能谱跟踪成分对深度的变化。 a-C:D膜与Be基板反应形成化学计量的碳化铍Be2C。反应在界面处开始,并在约500摄氏度的温度下穿过薄膜,直至整个薄膜反应为止。膜的反应部分不存在D,但仍存在于未反应的碳中。通过在400°C的氧气中加热,从Be中去除aC:D膜而不会形成碳化物。离子束分析还用于研究在高达680°C的温度下Be的氧化。通过依次暴露于不同的氧同位素中结果表明,氧化是由于Be从金属/氧化物界面渗透到外表面而发生的。 (C)1997 Elsevier Science B.V. [参考:16]

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