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Exploring surface reactivity of phosphorous-doped (6,0) and (4,4) BC3 nanotubes: A DFT study

机译:探索掺磷的(6,0)和(4,4)BC3纳米管的表面反应性:DFT研究

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摘要

We report a density functional theory study on the electronic structure properties of pristine and phosphorous-doped (6,0) and (4,4) single-walled BC3 nanotubes (BC3NTs). We examine the usefulness of local reactivity descriptors to predict the reactivities of different carbon/boron atomic sites on the external surface of the tubes. Electrostatic potentials V_S(r) and average local ionization energies ī_S(r) are computed on the surface of the investigated BC3NTs. A general feature of the systems considered here is that the magnitudes of negative V_S(r) associated with carbon atoms tend to be stronger when the boron atom is substituted with a phosphorous atom. In order to verify the surface reactivity pattern based on the chosen reactivity descriptors, we calculated the reaction energies for the interaction of an H+ ion or H radical with external surface of the (6,0) and (4,4) BC3NTs. It is clear that, for each nanotube studied, the reaction energies correlate well with the values of V_S(r) and ī_S(r).
机译:我们报告了原始和磷掺杂的(6,0)和(4,4)单壁BC3纳米管(BC3NTs)的电子结构性质的密度泛函理论研究。我们检查局部反应性描述符的有用性,以预测管外表面上不同碳/硼原子位点的反应性。在研究的BC3NT的表面上计算出静电势V_S(r)和平均局部电离能ī_S(r)。在此考虑的系统的一般特征是,当硼原子被磷原子取代时,与碳原子相关的负V_S(r)的大小趋于增强。为了验证基于所选反应性描述符的表面反应模式,我们计算了H +离子或H自由基与(6,0)和(4,4)BC3NTs外表面相互作用的反应能。显然,对于每个研究的纳米管,反应能都与V_S(r)和_S(r)的值很好地相关。

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