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Optically controlled GaAs-GaAlAs photonic band gap structure

机译:光控GaAs-GaAlAs光子带隙结构

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摘要

We study a mechanism of light-by-light control, based on changing the refractive index of the narrow-band layers in a semiconductor photonic band gap structure (PBGS). This change is caused by the contribution of the non-equilibrium charge carriers generated by the controlling radiation. We theoretically show that this mechanism can be efficient if an optimal controlling light wavelength is taken near the proper absorption edge of the narrow-band semiconductor layers, since small changes of the layer refractive indices at the band gap edge of a PBGS cause essential change of the transmission characteristics. A modulation depth of the controlled light of more than 90% is achieved for a PBGS based on GaAs at the wavelength 1.54 * 10~(-6) m under the controlling light power equal to 5 * 10~7 W m~(-2). The inertia of the mechanism considered is determined by the lifetime of the non-equilibrium charge carriers in semiconductor layers and is equal to 10~(-7) s in our case.
机译:我们基于改变半导体光子带隙结构(PBGS)中窄带层的折射率,研究了逐光控制的机制。这种变化是由控制辐射产生的非平衡电荷载流子的贡献引起的。我们从理论上证明,如果在窄带半导体层的适当吸收边缘附近获取最佳控制光波长,则该机制将是有效的,因为PBGS的带隙边缘处的层折射率的微小变化会导致PBGS的本质变化传输特性。对于基于GaAs的PBGS,在等于5 * 10〜7 W m〜(-2的控制光功率的情况下,在1.54 * 10〜(-6)m波长下获得的PBGS,可控光的调制深度达到90%以上)。所考虑的机制的惯性由半导体层中非平衡电荷载流子的寿命决定,在我们的情况下等于10〜(-7)s。

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