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Erbium-activated silica-titania planar waveguides on silica-on-silicon substrates prepared by rf sputtering

机译:射频溅射制备的硅基二氧化硅衬底上的b活化二氧化硅-二氧化钛平面波导

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摘要

Erbium-activated silica-titania planar waveguides were prepared by radio-frequency (rf) sputtering technique. Silica-on-silicon substrates obtained by plasma-enhanced chemical vapor deposition (PECVD) and rf sputtering (RFS) were employed. The refractive indices. the thickness and the propagation losses of the waveguides were measured. The refractive index and the roughness of the silica substrates produced by RFS appear to be dependent on the thickness. Thermal annealing, which is a necessary condition to obtain light propagation, induces a decrease of the refractive index in the silica substrates, The waveguide deposited on PECVD substrate exhibits several propagating modes with an attenuation coefficient 1.7 dB/cm compared with 12.2 dB/cm measured for the waveguide deposited on silica substrate produced by RFS technique. Emission of the I-4(13/2) --> I-4(15/2) transition with a 53 nm bandwidth was observed. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 16]
机译:通过射频(RF)溅射技术制备了-活化的二氧化硅-二氧化钛平面波导。使用通过等离子体增强化学气相沉积(PECVD)和射频溅射(RFS)获得的硅基二氧化硅衬底。折射率。测量了波导的厚度和传播损耗。通过RFS生产的二氧化硅基板的折射率和粗糙度似乎取决于厚度。热退火是获得光传播的必要条件,它会引起二氧化硅基板中折射率的降低。沉积在PECVD基板上的波导表现出几种传播模式,其衰减系数为1.7 dB / cm,而测得的值为12.2 dB / cm用于通过RFS技术沉积在二氧化硅衬底上的波导。观察到I-4(13/2)-> I-4(15/2)跃迁的发射带宽为53 nm。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:16]

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