Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD

摘要

The use of a tantalum wire in hot-wire chemical vapour deposition (HWCVD) has allowed the deposition of dense nanocrystalline silicon at low filament temperatures (1550 degreesC). A transition in the crystalline preferential orientation from (2 2 0) to (1 1 1) was observed around 1700 degreesC. Transmission electron microscopy (TEM) images, together with secondary ion mass spectrometry (SIMS) measurements, suggested that no oxidation occurred in materials obtained at low filament temperature due to the high density of the tissue surrounding grain boundaries, A greater concentration of SiH3 radicals formed at these temperatures seemed to be responsible for the higher density. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 17]