By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by pulsed laser deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (V-O) as the dominant defect which can be compensated for by thermal oxidation at temperatures >500 degrees C. As a consequence films with carrier concentrations in the range 10(16)-10(19) cm(-3) can be prepared by adjusting temperature alone. By altering the background oxygen pressure (P-D) we observe a change in the dominant defect - from tin interstitials (Sn-i) at low P-D (<50 mTorr) to V-O at higher P-D with similar ranges of carrier concentrations observed. Finally, we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to >100000 laser pulses. Here carrier concentrations >1 x 10(20) cm(-3) are observed that are associated with high concentrations of Sn-i which cannot be completely compensated for by modifying the growth parameters.
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机译：通过研究关键生长变量对通过脉冲激光沉积（PLD）制备的SnO2的测量结构和电性能的影响，我们证明了对固有n型缺陷形成的精细控制。生长温度的变化表明氧空位（VO）是主要缺陷，可以通过在> 500摄氏度的温度下进行热氧化来弥补。因此，载流子浓度在10（16）-10（19）cm（ -3）可以通过单独调节温度来制备。通过改变背景氧气压力（P-D），我们观察到主要缺陷的变化-从低P-D（<50 mTorr）的锡间隙（Sn-i）到较高P-D的V-O，观察到了相似的载流子浓度范围。最后，我们证明了通过将目标暴露于> 100000激光脉冲来控制用于PLD的合成目标表面的重要性。在这里，观察到载体浓度> 1 x 10（20）cm（-3），与高浓度的Sn-i有关，而后者不能通过修改生长参数来完全补偿。
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