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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Metal-free half-metallicity in a high energy phase C-doped gh-C3N4 system: a high Curie temperature planar system
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Metal-free half-metallicity in a high energy phase C-doped gh-C3N4 system: a high Curie temperature planar system

机译:高能相C掺杂gh-C3N4系统中的无金属半金属:高居里温度平面系统

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摘要

Metal free half-metallicity has been the subject of intense research in the field of spintronics devices. Using density functional theoretical calculations, atomically thin graphitic heptazine carbon nitride (gh-C3N4) based systems are studied for possible spintronics application. Ferromagnetism is observed in all of the C-doped gh-C3N4 systems due to hole injection. However, a high energy phase of C-doped gh-C3N4 (C-N2@ gh-C3N4) shows strong half-metallicity with a Curie temperature as high as similar to 400 K. The calculated Curie temperature is noticeably higher than the metal-free based half-metallic systems studied to date. Thereby, such a ferromagnetic half-metallic system with a high Curie temperature can be promising for high temperature spintronics applications.
机译:无金属的半金属性已经成为自旋电子器件领域的深入研究的主题。使用密度泛函理论计算,研究了原子薄的石墨庚嗪碳氮化物(gh-C3N4)基系统,以用于可能的自旋电子学应用。由于空穴注入,在所有C掺杂的gh-C3N4系统中均观察到铁磁性。但是,掺C的gh-C3N4(C-N2 @ gh-C3N4)的高能相显示出很强的半金属性,居里温度高达400K。计算出的居里温度明显高于金属居里温度。迄今为止已研究的免费的半金属系统。因此,这种具有高居里温度的铁磁半金属系统对于高温自旋电子学应用可能是有希望的。

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