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The tunable electronic structure and mechanical properties of halogenated silicene: a first-principles study

机译:卤化硅的可调电子结构和力学性能:第一性原理研究

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We have investigated the geometry, electronic structure and mechanical properties of halogenated silicene XSi (X = F, Cl, Br and I) in various conformers from first principles systematically. The energetics, structure, band structure, elastic constants and the corresponding modulus are given in detail. Our results indicate that halogenated silicene shows enhanced stability compared with silicene and presents a moderate and tunable direct gap with small carrier effective mass. The element- and conformer-dependence of the energy gap can be understood well by the variance of buckling and a bond energy perturbation theory based on orbital hybridization. Moreover, the direction-dependent mechanical properties are also calculated and discussed. Interestingly, a negative Poisson ratio is predicted in fluorinated silicene with boat2 structure. The enhanced stability, moderate energy gap, small carrier effective masses and improved mechanical properties predicted here make halogenated silicene a promising candidate for future electronic devices.
机译:我们从第一原理出发,系统地研究了各种构象异构体中卤化硅XSi(X = F,Cl,Br和I)的几何结构,电子结构和机械性能。详细给出了其能量,结构,能带结构,弹性常数和相应的模量。我们的结果表明,与硅烯相比,卤代硅烯显示出更高的稳定性,并呈现出适中且可调的直接间隙,且载流子有效质量较小。通过屈曲的方差和基于轨道杂交的键能微扰理论,可以很好地理解能隙的元素和构象依赖性。此外,还计算并讨论了方向相关的机械性能。有趣的是,在具有boat2结构的氟化硅中,泊松比为负。此处预测的增强的稳定性,适中的能隙,较小的载流子有效质量和改善的机械性能使卤化硅烯成为未来电子设备的有希望的候选者。

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