首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Low temperature electrical transport and photoresponsive properties of H-doped M0O3 nanosheets
【24h】

Low temperature electrical transport and photoresponsive properties of H-doped M0O3 nanosheets

机译:H掺杂的MoO3纳米片的低温电传输和光响应特性

获取原文
获取原文并翻译 | 示例
       

摘要

α-MoO3 nanosheets were synthesized by a water bath method using ammonium heptamolybdenum tetrahydrate and concentrated nitric acid as precursors. Hydrogen was doped by a chemical reduction in aqueous acidic media, with hydrazine hydrate used as the reducing agent. Temperature dependent resistance showed that the low temperature Peierls transition of H-doped M0O3 nanosheets breaks below 50 K, and its resistance is satisfied at temperatures lower than 37 K (37-10 K). This phenomenon was induced by thermal disturbance and the dominance of defects in low temperature transport, which was confirmed by photoresponse measurements taken before and after the break of the new phase.
机译:以四水合七钼酸铵和浓硝酸为前体,通过水浴法合成α-MoO3纳米片。通过在含水酸性介质中化学还原来掺杂氢,其中水合肼用作还原剂。随温度变化的电阻表明,H掺杂的M0O3纳米片的低温Peierls跃迁低于50 K,并且在低于37 K(37-10 K)的温度下其电阻可以满足要求。这种现象是由热干扰和低温传输中缺陷的优势所引起的,这可以通过在新相破裂之前和之后进行的光响应测量得到证实。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号