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首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Preparation and gas permeation properties of thermally stable organosilica membranes derived by hydrosilylation
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Preparation and gas permeation properties of thermally stable organosilica membranes derived by hydrosilylation

机译:氢化硅烷化衍生的热稳定有机硅膜的制备及透气性能

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Thermally stable organosilica amorphous membranes were fabricated by in situ hydrosilylation of vinyl and hydrosilyl groups in Si precursors for the formation of a Si-C-C-Si unit, as well as the Si-O-Si unit via the conventional hydrolysis and condensation of silanol groups. Two types of SiOC membranes (VTT-type prepared by vinyltrimethoxysilane (VTMS), triethoxysilane (TRIES) and tetramethyldisiloxane (TMDSO); and VT-type prepared by VTMS and TRIES) that consisted of a Si-C-C-Si unit created by the hydrosilylation of vinyl and hydrosilyl groups in a Si precursor were fabricated at temperatures higher than 300 °C under N2. Single-gas permeation properties for SiOC membranes at temperatures ranging from 100-500 °C were examined to determine the effect of a silica precursor on the size of an amorphous network. A SiOC membrane (VTT-type) fabricated at 400 °C under N2 showed a H2 permeance of 5.3 × 10~(-7) mol m~(-2) s~(-1) Pa~(-1) with H2/CO2, H2/N2, H2/CH4 and H2/CF4 permeance ratios of 5.6, 15, 18 and 485, respectively, at 400 °C. The permeance of H2 for a VTT-type membrane heat-treated at 550 °C in air significantly increased from 5.3 × 10~(-7) to 2 × 10~(-6) mol m~(-2) s~(-1) Pa~(-1) with a decrease in the H2/CF4 permeance ratio from 485 to 90 due to the combustion of the CH3 groups. The SiOC membrane (VT-type) showed high thermal stability in air at 550 °C with a H2 permeance of 3.0 × 10~(-7) mol m~(-2) s~(-1) Pa~(-1) and H2/CH4 and H2/CF4 permeance ratios of 50 and 400, respectively, at 400 °C.
机译:通过在硅前体中进行乙烯基和氢硅烷基的原位硅氢加成反应以形成Si-CC-Si单元以及通过常规水解和缩合硅烷醇基团的Si-O-Si单元来制备热稳定的有机硅非晶膜。 。两种类型的SiOC膜(由乙烯基三甲氧基硅烷(VTMS)制备的VTT型,三乙氧基硅烷(TRIES)和四甲基二硅氧烷(TMDSO)以及VTMS和TRIES制备的VT型)由通过硅氢加成反应形成的Si-CC-Si单元组成Si母体中的乙烯基和氢甲硅烷基基团是在N2下于高于300°C的温度下制备的。研究了SiOC膜在100-500°C范围内的单气体渗透性能,以确定二氧化硅前体对无定形网络尺寸的影响。在N2下于400°C制备的SiOC膜(VTT型)的H2渗透率为5.3×10〜(-7)mol m〜(-2)s〜(-1)Pa〜(-1)在400°C下,CO2,H2 / N2,H2 / CH4和H2 / CF4的渗透率分别为5.6、15、18和485。在550°C的空气中热处理的VTT型膜的H2渗透率从5.3×10〜(-7)mol增加到2×10〜(-6)mol m〜(-2)s〜(- 1)Pa〜(-1),由于CH3基团的燃烧,H2 / CF4渗透率从485降低到90。 SiO型膜(VT型)在550°C的空气中表现出较高的热稳定性,H2渗透率为3.0×10〜(-7)mol m〜(-2)s〜(-1)Pa〜(-1)在400°C下H2 / CH4和H2 / CF4的渗透率分别为50和400。

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