首页> 外文期刊>Journal of Materials Chemistry, A. Materials for energy and sustainability >Improved photoelectrochemical performance of electrodeposited metal-doped BiVO4 on Pt-nanoparticle modified FTO surfaces
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Improved photoelectrochemical performance of electrodeposited metal-doped BiVO4 on Pt-nanoparticle modified FTO surfaces

机译:Pt纳米粒子改性FTO表面上电沉积的金属掺杂BiVO4的改进的光电化学性能

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摘要

The recombination of photogenerated electron-hole pairs is one of the main limiting factors of photoelectrocatalysts absorbing in the visible part of the solar spectrum. Especially for BiVO4 the slow electron transport to the back contact facilitates charge recombination. Hence, thin layers have to be used to obtain higher photocurrents which are concomitantly only allow low absorption of the incident light. To address this limitation we have modified FTO substrates with Pt-nanoparticles before electrodepositing BiVO4. The Pt-nanoparticles decrease the overpotential for the electrodeposition of BiVO4, but more importantly they provide the basis for decreased charge recombination. Electrodeposited Mo-doped BiVO4 on Pt-nanoparticle modified FTO exhibits a substantially decreased recombination of photogenerated charge carriers during frontside illumination. Simultaneous co-doping of BiVO4 with two different metals leads to a substantial enhancement of the incident-photon-to-current efficiency (IPCE) during light driven oxygen evolution reaction. Highest IPCE (>30% at 1.2 V vs. RHE) values were obtained for Mo/Zn- and Mo/B-doped BiVO4.
机译:光生电子-空穴对的重组是光电子催化剂在太阳光谱的可见光部分吸收的主要限制因素之一。尤其是对于BiVO4,缓慢的电子传输到背面接触促进了电荷复合。因此,必须使用薄层来获得更高的光电流,其同时仅允许入射光的低吸收。为了解决这个限制,我们在电沉积BiVO4之前已经用Pt纳米粒子修饰了FTO基板。 Pt纳米颗粒降低了BiVO4电沉积的过电势,但更重要的是,它们为降低电荷重组提供了基础。 Pt纳米粒子修饰的FTO上电沉积的Mo掺杂BiVO4在正面照明过程中表现出光生载流子的重组显着降低。 BiVO4与两种不同金属的同时共掺杂会导致光驱氧释放反应过程中入射光子电流效率(IPCE)的显着提高。 Mo / Zn掺杂和Mo / B掺杂的BiVO4的IPCE值最高(相对于RHE在1.2 V时> 30%)。

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