Multiscale Modeling of Novel Carbon Nanotube/Copper-Composite Material Used in Microelectronics

摘要

Current carrying capacity is one of the elements that hinders further miniaturization of Copper (Cu) interconnects. Therefore, there is a need to propose new materials with higher ampacity (current carrying capacity) that have the potential to replace Cu. Experimental observations have shown that Carbon Nanotube (CNT)/Cu-composite material has a hundredfold ampacity of Cu, which makes it a good candidate to replace Cu. However, sufficient information about the mechanical behavior of the novel CNT/Cu-composite is not available. In the current paper, the CNT/Cu-composite is utilized to construct Through Silicon Via (TSV). The mechanical behavior, specifically the fatigue life, of the CNT/Cu-TSV is evaluated by applying a multiscale modeling approach. Molecular Dynamics (MD) simulations are conducted to evaluate the tensile strength and the coefficient of thermal expansion of CNTs. MD simulation is also used to determine the interface behavior between CNTs and Cu. MD simulation results are integrated into Finite Element analysis at the micro-level to estimate the fatigue life of the CNT/Cu-TSV. A comparison is made with base material; Cu. CNTs addition has redistributed the plastic deformation in Cu to occur at two different locations (Si/Cu interface and Cu/CNT interface) instead of only one location (Si/Cu interface) in the case of Cu-only-TSV. Thus, the maximum equivalent plastic strain has been alleviated in the CNT/Cu-TSV. Accordingly, CNT/Cu-TSV has shown a threefold increase in the fatigue life. This is a solid indication of the improvement in the fatigue life that is attributed to the addition of CNTs.