Structures and Properties of Oriented IZO Transparent Conducting Thin Films Deposited on AZO Buffer Layers by Pulsed Laser Deposition

摘要

The electrical and optical properties of Zn-doped In_2O_3 (IZO) thin films depend on the deposition process, oxygen partial pressure, substrate temperature, and crystallinity of the thin films. In this study, IZO transparent conducting oxide thin films with a highly (111) preferred orientation were fabricated by pulsed laser deposition (PLD) on AZO buffer layers, as a function of the substrate temperature. The crystal structures of the oriented IZO thin films were analyzed, along with their electrical and optical properties, by X-ray diffraction, field emission scanning electron microscopy, Hall measurement system, and ultraviolet-visible spectrometry. Highly oriented IZO/AZO thin films with an electrical resistivity of 6.0 × 10~(-4) ohm cm and an optical transmittance of over 85% were fabricated under optimum-processing-parameter conditions.