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AC Dielectrophoresis Alignment of ZnO Nanowires and Subsequent Use in Field-Effect Transistors

机译:ZnO纳米线的交流介电电泳对准及其随后在场效应晶体管中的使用

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摘要

We report on the dielectrophoresis (DEP) characterization of single crystalline zinc oxide (ZnO) nanowires with variations of the AC electric field and frequency. The alignment yield rate of ZnO nanowires in the gap over the 200 metal electrodes increased with increasing AC electric field and also changed by the applying frequency. Moreover, we demonstrated that the DEP prepared multi-ZnO nanowires field-effect transistors (FETs) exhibited excellent performance with a transconductance of ~3 μS and a high drain current of ~2.7 × 10{sup}(-6) A (V{sub}(DS) = 5 V, V{sub}G = 20 V).
机译:我们报告了随着交流电场和频率变化的单晶氧化锌(ZnO)纳米线的介电电泳(DEP)表征。 ZnO纳米线在200个金属电极上的缝隙中的对准良率随交流电场的增加而增加,并且也随施加频率而变化。此外,我们证明了DEP制备的多ZnO纳米线场效应晶体管(FET)表现出优异的性能,跨导约为3μS,高漏极电流约为2.7×10 {sup}(-6)A(V { sub}(DS)= 5 V,V {sub} G = 20 V)。

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