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Preparation of high purity ZnO nanobelts by thermal evaporation of ZnS

机译:ZnS热蒸发制备高纯ZnO纳米带

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摘要

High purity one-dimensional ZnO nanobelts were synthesized by thermally evaporating commercial ZnS powders in a hydrogen-oxygen mixture gas at 1050 degrees C. It was found that these ZnO nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangle-shaped cross-section with typical widths of 20 to 100 nanometers and lengths of up to hundreds of micrometers with lattice constants of a = 0.325 nm and c = 0.520 nm. The self-catalytic hydrogen-oxygen assisted growth of ZnO nanobelt is discussed. The photoluminescence (PL) characterization of the ZnO nanobelts shows strong near-band UV emission (about 383 nm) and one broad peak at 501 nm, which indicates that the ZnO nanobelts have good potential application in optoelectronic devices.
机译:高纯度的一维ZnO纳米带是通过在1050℃的氢氧混合气体中热蒸发商业ZnS粉末而合成的。发现这些ZnO纳米带具有沿[0001]方向生长的单晶六角纤锌矿结构。它们具有矩形的横截面,典型的宽度为20至100纳米,长度最大为数百微米,晶格常数为a = 0.325 nm和c = 0.520 nm。讨论了ZnO纳米带的自催化氢氧辅助生长。 ZnO纳米带的光致发光(PL)表征显示出很强的近带UV发射(约383 nm)和一个在501 nm处的宽峰,这表明ZnO纳米带在光电器件中具有良好的潜在应用。

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