Structural optimization of quantum wells used in a 1-(mu)m vertical-external-cavity surface-emitting laser

摘要

On the basis of the analysis of material gain, a comprehensive optimization of quantum wells used in a 1-(mu)m vertical-external-cavity surface-emitting laser was carried out. For a single-well structure, the optimized width lies between 8 and 10 nm, the optimized depth is a quantum well with approx0.1 Al composition in AlGaAs barrier, and the optimized configurations are graded-index quantum well and quantum well with AlGaAs barrier and a GaAs buffer layer. The optimal width of a double- or triple-well structure lies between 6 and 8 nm. Compared to its single- and triple-well counterparts, double-well structure provides higher gain and has more tolerance to the deviation of laser wavelength.