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Effect of the manufacturing parameters on the structure of nitrogen-doped carbon nanotubes produced by catalytic laser-induced chemical vapor deposition

机译:制造参数对催化激光诱导化学气相沉积法制备氮掺杂碳纳米管结构的影响

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摘要

Nitrogen-containing carbon nanotubes (CNx-NTs), with a relatively high level of nitrogen doping were prepared by the catalytic laser-induced CVD method. The nanotubes were catalytically grown directly on a silicon substrate from C_2H_2/NH_3 gaseous precursors. X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) give firm evidence for the nitrogen doping. As determined by XPS, the N concentration for the prepared CNx-NTs increases from 3.6 to 30.6 at.% with increasing ammonia concentration and pressure. TEM images indicate that the nanotubes are bamboo like. As the nitrogen content increases, there is a transition from the bamboo shape with few defects and little distortion to a corrugated structure with a much larger number of defects. Raman spectroscopy revealed that with increasing nitrogen concentration, there is more disorder and defects, together with an increase in I_D/I_G ratio. By energy-filtering TEM, a higher N concentration was found on the outer amorphous nanolayer than in the compartment core of the nanotubes.
机译:通过催化激光诱导CVD法制备了氮掺杂水平较高的含氮碳纳米管(CNx-NTs)。纳米管由C_2H_2 / NH_3气态前体直接催化生长在硅基底上。 X射线光电子能谱(XPS)和透射电子显微镜(TEM)为氮掺杂提供了确凿的证据。如XPS所确定的,随着氨浓度和压力的增加,制得的CNx-NTs的氮浓度从3.6原子%增加到30.6原子%。 TEM图像表明纳米管是竹子状的。随着氮含量的增加,从具有很少缺陷和很少变形的竹子形状过渡到具有大量缺陷的波纹状结构。拉曼光谱显示,随着氮浓度的增加,存在更多的无序和缺陷,以及I_D / I_G比值的增加。通过能量过滤TEM,发现在外部非晶纳米层上比在纳米管的隔室芯中更高的N浓度。

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