Investigation of reaction synthesis of AlN-SiC solid solution

摘要

In recent years, there has been an increasing interest in the development of SiC, III-nitrides and their solid solutions as replacements for conventional III-V optoelectronic devices fabricated using As- and P-based semiconductors. Of these compounds, solid solutions of the (SiC)_(1-x) (AlN)_x system are promising high-temperature wide-gap semiconductor materials with an energy gap that ranges from 3.30 eV (for 2H-SiC) to 6.0 eV (for AlN) [1,2].