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Phase equilibria in the RuO_2-Bi_2O_3-NiO and RuO_2-AI_2O_3-MiO systems

机译:phase equilibria int和Ru O_2-BI_2O_3-n IO and Ru O_2-AI_2O_3-M IO systems

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摘要

After firing, thick film resistors consist of a conduc-tive phase in a glass matrix. The conductive phase is either RuO2 or ruthenates, usually Bi2Ru2O7 [1,2]. Specific conductivities of RuO2 and Bi2Ru2O7 are 40 X 1CT6 ohm cm and 150 x 10"6 ohm cm, respec-tively [3,4]. However, resistors prepared from a mixture of ruthenium oxide or ruthenates and a glass phase have relatively high positive temperature resistivity coefficients (TRC). To decrease the TCR, small amounts of so-called TCR modifiers, i.e. semiconducting oxides with negative TCR, are added. Among many others, NiO is reported to be sometimes used as a TCR modifier [5].
机译:烧结后,厚膜电阻器由玻璃基质中的导电相组成。导电相为RuO2或钌酸盐,通常为Bi2Ru2O7 [1,2]。 RuO2和Bi2Ru2O7的比电导率分别为40 X 1CT6 ohm cm和150 x 10“ 6 ohm cm。[3,4]。但是,由氧化钌或钌酸盐和玻璃相的混合物制成的电阻具有较高的正值为了降低TCR,添加了少量所谓的TCR改性剂,即具有负TCR的半导体氧化物,据报道,NiO有时被用作TCR改性剂[5]。

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